Uncooled High Speed Ge/Si Avalanche Photodiode for 50 Gbit/s-PON with 60 km Reach - Archive ouverte HAL
Communication Dans Un Congrès Année : 2023

Uncooled High Speed Ge/Si Avalanche Photodiode for 50 Gbit/s-PON with 60 km Reach

Résumé

A high-speed germanium on silicon APD is demonstrated for DSP-free 50G-PONs. Sensitivities of -24 dBm at 58.2 Gbit/s and -26.5 dBm at 50 Gbit/s over 60 km of fiber are experimentally obtained in real time with temperature from -40 degrees C to 80 degrees C. (c) 2022 The Author(s)
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Dates et versions

hal-04198368 , version 1 (07-09-2023)

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Citer

Jérémy Potet, Gaël Simon, Georges Gaillard, Camille Dessemond, Fabienne Saliou, et al.. Uncooled High Speed Ge/Si Avalanche Photodiode for 50 Gbit/s-PON with 60 km Reach. Optical Fiber Communications Conference and Exhibition (OFC), Mar 2023, San Diego, United States. ⟨10.1364/OFC.2023.Th3G.3⟩. ⟨hal-04198368⟩
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