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Communication Dans Un Congrès Année : 2023

Influence of Interfaces on the Enhanced Ferroelectricity of Ultra-Thin HZO-Based Tunnel Junctions

Résumé

The exponential development of artificial intelligence technologies has increased the demand of computing power and energy efficiency. In this respect, ferroelectric tunnel junction (FTJ) memristors are extremely promising components for the implementation of beyond- Von Neumann hardware architectures, e.g. brain-inspired computing, for increasing device scalability and for their ultra-low operating current [1]. The discovery of ferroelectricity in HfO_2-based materials [2] has paved the way for the integration of ferroelectric devices into the complementary-metal-oxide-semiconductor industry. Furthermore, the Hf_0.5 Zr_0.5 O_2 (HZO) compound, through the Hf:Zr 1:1 substitution, has attracted great interest due to its high polarisation value and low crystallization temperature. Here, we investigate four different 6 nm-thick HZO-based heterostructures, which were entirely realized by sputtering [3], with electrodes made of titanium nitride and/or tungsten. We report a systematic and exhaustive analysis of the structural and chemical properties of the electrode/ferroelectric interfaces of different heterostructures, using a multiscale combination of techniques, such as X-ray diffraction, electron energy-loss spectroscopy, and high-resolution TEM. The results demonstrate how the top and bottom interfaces influence the ferroelectric performances of ultra-thin HZO-based tunnel devices. This work provides relevant and useful insights for the synthesis of high quality HZO-based stacks with enhanced ferroelectricity, which could serve as memory units for brain-inspired hardware architectures. Device-to-device variability is, indeed, one of the main issues to face for the realization of neuromorphic networks, where arrays of millions of memory components are used [4]. For this reason, the improvement of material engineering and optimization of device structure are critical aspects to deal with. This work is supported by the I3E ECLAUSion project that has received funding from the European Union's Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement No 801512. References: [1] R. Berdan et al., Nat. Electron., vol. 3, no. 5, pp. 259–266, 2020. [2] T. S. Böscke et al., Appl. Phys. Lett., vol. 99, no. 10, 2011. [3] G. Segantini et al., Phys. status solidi – Rapid Res. Lett., p. 2100583, Mar. 2022. [4] A. Mehonic et al., Adv. Intell. Syst., vol. 2, no. 11, p. 2000085, Nov. 2020.
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hal-04195857 , version 1 (04-09-2023)

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  • HAL Id : hal-04195857 , version 1

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Greta Segantini, Benoît Manchon, Infante Ingrid C., Matthieu Bugnet, Rabei Barhoumi, et al.. Influence of Interfaces on the Enhanced Ferroelectricity of Ultra-Thin HZO-Based Tunnel Junctions. ISAF-ISIF-PFM 2023 SYMPOSIUM, IEEE; UFFC, Jul 2023, Cleveland, United States. ⟨hal-04195857⟩
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