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Communication Dans Un Congrès Année : 2023

A 5-DC-parameter MOSFET model for circuit simulation in QucsStudio and SPECTRE

Résumé

A minimalist MOSFET model for circuit simulation with only five DC parameters written in Verilog-A is presented. The five parameters can be extracted from direct and simple methods in common circuit simulators. The DC characteristics of transistors in both 180-nm bulk CMOS and 28-nm FD-SOI technologies generated by the five-parameter model are compared with those generated by the BSIM and UTSOI2 models, respectively. The simulation of some basic circuits using the proposed 5-DC-parameter MOSFET model shows good matching with the simulation using the BSIM model, at the benefit of a much simpler set of DC parameters.

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Dates et versions

hal-04188231 , version 1 (22-10-2023)

Licence

Paternité - Pas d'utilisation commerciale

Identifiants

Citer

Deni Germano Alves Neto, Cristina Missel Adotnes, Gabriel Maranhão, Mohamed Khalil Bouchoucha, Manuel Barragan, et al.. A 5-DC-parameter MOSFET model for circuit simulation in QucsStudio and SPECTRE. 21st IEEE Interregional NEWCAS Conference (NEWCAS 2023), Jun 2023, Edinburgh, United Kingdom. ⟨10.1109/NEWCAS57931.2023.10198173⟩. ⟨hal-04188231⟩

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