Time resolved hyper-Raman surface spectroscopy of (111) silicon
Résumé
We performed a time-resolved Hyper-Raman spectroscopy of a (111) silicon wafer upon its excitation by a near IR optical pulse. Upon excitation of the silicon wafer by the optical pulse, we record the broadening and increase of the Stokes and anti-Stokes bands centered around the Si lattice phonon and SiO2 mode centered at ~610 cm -1 and ~1100 cm -1 , respectively. This unique technic makes it possible to reveal the electron-phonon scattering which thermalize the hot carriers with the lattice on time scale of 100 to 300 fs
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