Lateral modulations in zero-net-strained GaInAsP multilayers grown by gas source molecular-beam epitaxy - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Applied Physics Année : 1993

Lateral modulations in zero-net-strained GaInAsP multilayers grown by gas source molecular-beam epitaxy

Résumé

Compressive GaInAsP multiple quantum wells (MQW) grown by gas source molecular-beam epitaxy present altered structural and optical characteristics when tensile GaInAsP barriers are used instead of lattice-matched ones. An alternate tensile/compressive GaInAsP MQW has been examined by transmission electron microscopy. A strong lateral modulation of thickness, strain, and probably chemical composition was shown. This modulation exhibits pronounced anisotropy, with a periodicity of about 50 nm along the [110] direction. Although its origin is not fully accounted for yet, it seems to allow partial elastic relaxation of tensile layers. Based on this analysis, a schematic description of distortion modulation is proposed.
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hal-04175216 , version 1 (01-08-2023)

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Anne Ponchet, A. Rocher, J.-Y. Emery, C. Starck, L. Goldstein. Lateral modulations in zero-net-strained GaInAsP multilayers grown by gas source molecular-beam epitaxy. Journal of Applied Physics, 1993, 74 (6), pp.3778-3782. ⟨10.1063/1.354469⟩. ⟨hal-04175216⟩
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