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Article Dans Une Revue Journal of Applied Physics Année : 1994

Self-induced laterally modulated GaInP/InAsP structure grown by metal-organic vapor-phase epitaxy

Anne Ponchet
A. Rocher
  • Fonction : Auteur
A. Ougazzaden
  • Fonction : Auteur
A. Mircea
  • Fonction : Auteur

Résumé

Zero-net strained multilayer alternating tensile GaInP and compressive InAsP have been grown on (001)InP by metal-organic vapor-phase epitaxy. A structural analysis using transmission electron microscopy (TEM) is reported. A remarkably regular laterally modulated structure has been observed. GaInP- and InAsP-rich vertical zones alternate with a periodicity of 0.28 μm along the lateral [110] direction, thus balancing the mismatch along the [110] rather than the [001] growth direction. TEM experiments suggest that each vertical zone is partially elastically relaxed.
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Dates et versions

hal-04175211 , version 1 (01-08-2023)

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Anne Ponchet, A. Rocher, A. Ougazzaden, A. Mircea. Self-induced laterally modulated GaInP/InAsP structure grown by metal-organic vapor-phase epitaxy. Journal of Applied Physics, 1994, 75 (12), pp.7881-7883. ⟨10.1063/1.356573⟩. ⟨hal-04175211⟩
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