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Article Dans Une Revue Applied Physics Letters Année : 2004

Transmission electron microscopy and Raman measurements of the misfit stress in a Si tensile strained layer

Résumé

A tensile-strained Si layer grown on a Si0.8Ge0.2 pseudo substrate with a nominal lattice mismatch of −0.76% has been studied by transmission electron microscopy using a curvature method and Raman scattering in order to determine experimentally the in-plane component of the epitaxial stress. The stress is obtained by measuring the curvature and the thickness on different areas of a thinned sample. Experimental values of the stress given by the two methods are in good agreement and are close to the nominal one.
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Dates et versions

hal-04175197 , version 1 (01-08-2023)

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M. Cabié, Anne Ponchet, A. Rocher, V. Paillard, L. Vincent. Transmission electron microscopy and Raman measurements of the misfit stress in a Si tensile strained layer. Applied Physics Letters, 2004, 84 (6), pp.870-872. ⟨10.1063/1.1644639⟩. ⟨hal-04175197⟩
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