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Article Dans Une Revue Journal of Physical Chemistry B Année : 1997

Electrochemical Formation of Close-Packed Phenyl Layers on Si(111)

Greffage électrochimique de monocouches phenyles sur des surfaces de Si(111)

Résumé

4-NO2 and 4-Br benzenediazonium salts have been electrochemically reduced on H-terminated Si(111) electrodes. Electrochemical measurements evidence that the reaction results in a robust modification of Si-(111) surfaces. XPS shows that organic films are monolayer thick and that covalent Si-Ar bonding occurs,with no oxide at the interface. In the case of the Br salt, quantitative RBS measurements suggest that layers are (2x1) close-packed and assess their stability against several rinsing procedures including exposure to 40% HF. A mechanism of grafting is discussed

Domaines

Chimie Matériaux

Dates et versions

hal-04166177 , version 1 (19-07-2023)

Identifiants

Citer

C. Henry de Villeneuve, J. Pinson, Marie Claude Bernard, P. Allongue. Electrochemical Formation of Close-Packed Phenyl Layers on Si(111). Journal of Physical Chemistry B, 1997, 101 (14), pp.2415-2420. ⟨10.1021/jp962581d⟩. ⟨hal-04166177⟩
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