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Article Dans Une Revue Physical Review Materials Année : 2023

Direct observation of highly anisotropic electronic and optical nature in indium telluride

François Bertran
Patrick Le Fèvre
Mathieu G Silly
Julien Chaste
Marco Pala

Résumé

Metal monochalcogenides (MX , M = Ga, In; X = S, Se, Te) offer a large variety of electronic properties depending on chemical composition, number of layers, and stacking order. InTe material has a one-dimensional chain structure, from which intriguing properties arise. Precise experimental determination of the electronic structure of InTe is needed for a better understanding of potential properties and device applications. In this study, by combining angle-resolved photoemission spectroscopy and density functional theory calculations, we demonstrate the stability of InTe in the tetragonal crystal structure, with a semiconducting character and an intrinsic p-type doping. The valence band maximum results in being located at the high symmetric M point with a high elliptical valley, manifesting a large effective mass close to the Fermi level. The longitudinal and transverse effective masses of the M valley are measured as 0.2 m 0 and 2 m 0 , respectively. More specifically, we observe that the effective mass of the hole carriers is about ten times larger along the chain direction compared to the perpendicular one. Remarkably, the in-plane anisotropy of effective mass from the experiment and in theoretical calculations are in good agreement. These observations indicate a highly anisotropic character of the electronic band structure, making InTe of interest for electronic and thermoelectric applications.
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hal-04159938 , version 1 (12-07-2023)

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Geoffroy Kremer, Aymen Mahmoudi, Meryem Bouaziz, Cléophanie Brochard-Richard, Lama Khalil, et al.. Direct observation of highly anisotropic electronic and optical nature in indium telluride. Physical Review Materials, 2023, 7 (7), pp.074601. ⟨10.1103/physrevmaterials.7.074601⟩. ⟨hal-04159938⟩
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