Donor-Acceptor Pairs Recombination as the Origin of the Emission Shift In InGaN/GaN Scintillator Heterostructures Doped with Zn - Archive ouverte HAL Access content directly
Journal Articles ECS Journal of Solid State Science and Technology Year : 2023

Donor-Acceptor Pairs Recombination as the Origin of the Emission Shift In InGaN/GaN Scintillator Heterostructures Doped with Zn

Abstract

We report luminescence decay characteristics of the InGaN/GaN scintillator heterostructures doped with Zn. Unusually large shifting of luminescence band caused by Zn acceptors incorporated in InGaN is observed both in time-resolved and excitation-dependent spectra. Origins of the shifts are discussed, and model based on donor-acceptor pair recombination is introduced. The results imply a shrinkage of donor Bohr radius compared to the bulk material caused by quantum confinement effect. The slow decay of Zn band points out to the necessity of Zn impurity elimination in applications requiring fast timing characteristics of a scintillator.
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Dates and versions

hal-04156893 , version 1 (20-11-2023)

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František Hájek, Vítězslav Jarý, Tomáš Hubáček, Filip Dominec, Alice Hospodková, et al.. Donor-Acceptor Pairs Recombination as the Origin of the Emission Shift In InGaN/GaN Scintillator Heterostructures Doped with Zn. ECS Journal of Solid State Science and Technology, 2023, 12 (6), pp.066004. ⟨10.1149/2162-8777/acda62⟩. ⟨hal-04156893⟩
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