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Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2021

Normally-OFF Diamond Reverse Blocking MESFET

Résumé

Schottky contacts have been used to fabricate normally- OFF lateral reverse-blocking MESFETs on p-type (boron-doped) O-terminated monocrystalline diamond. The devices utilized an ohmic source contact but both gate and drain contacts were Schottky in nature. Boron-doped p-channel diamond MESFETs reported to date display the less attractive normally- ON characteristics. Here, the normally- OFF transistor delivered a current level of ~1.5 μ Amm −1 at a negative VGS of 0.8 V and a transconductance ( gm ) of 16 μ Smm −1 , measured at room temperature (RT); at a temperature of 425 K, these values rose to ∼70 μ Amm −1 for IDS and a gm value of 260 μ Smm −1 . In both cases, a negligible gate leakage current was measured with no breakdown apparent at the maximum field investigated here ( 3.7×105 V/m −1 ). The Schottky gate demonstrates a well-behaved control of the channel even at higher temperatures. The high-temperature operation, normally- OFF behavior, and diamond’s inherent radiation hardness make this transistor promising for harsh environment applications.

Domaines

Electronique
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Dates et versions

hal-04149880 , version 1 (28-02-2024)

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Citer

J. Canas, A. C. Pakpour-Tabrizi, T. Trajkovic, F. Udrea, D. Eon, et al.. Normally-OFF Diamond Reverse Blocking MESFET. IEEE Transactions on Electron Devices, 2021, 68 (12), pp.6279-6285. ⟨10.1109/TED.2021.3117237⟩. ⟨hal-04149880⟩
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