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Article Dans Une Revue Journal of Applied Physics Année : 2022

Anisotropic magnetoresistance in Mn 4− x Ni x N and the change in the crystalline field

Haruka Mitarai
  • Fonction : Auteur
Tomohiro Yasuda
  • Fonction : Auteur
Laurent Vila
Syuta Honda
Takashi Suemasu

Résumé

We focus on rare-earth-free anti-perovskite Mn 4− x Ni x N epitaxial films, which can be used for ultrafast current-induced domain wall motion (CIDWM) in magnetic strips. The magneto-transport properties of these materials are very important for a deep understanding of CIDWM. In this study, we investigated the magneto-transport properties of Mn 4− x Ni x N epitaxial films grown on SrTiO 3 (001) and MgO(001) substrates through anisotropic magnetoresistance (AMR) measurements at temperatures between 2 and 300 K. In samples with a small Ni composition such as x = 0.05−0.1, the AMR ratio of Mn 4− x Ni x N drastically decreased with increasing temperature. We also analyzed the twofold and fourfold symmetries in the AMR curves. Fourfold symmetry is caused by tetragonal crystal fields and is unique to anti-perovskite 3 d-metal nitrides such as Mn 4 N and Fe 4 N. Only slight fourfold symmetry was observed in Mn 4− x Ni x N. We also performed first-principles calculations with the Vienna ab initio simulation package (VASP) to obtain the projected density of states (PDOS) of d orbitals in Mn 4− x Ni x N, which is responsible for the magnetism of these materials. We conclude that these results are due to the Ni atoms, which function as magnetic impurities and lead to a noticeable change in PDOS, as proved by VASP calculation.
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Dates et versions

hal-04142249 , version 1 (26-06-2023)

Identifiants

Citer

Taro Komori, Haruka Mitarai, Tomohiro Yasuda, Sambit Ghosh, Laurent Vila, et al.. Anisotropic magnetoresistance in Mn 4− x Ni x N and the change in the crystalline field. Journal of Applied Physics, 2022, 132 (14), pp.143902. ⟨10.1063/5.0107172⟩. ⟨hal-04142249⟩
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