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Poster De Conférence Année : 2021

Cryo-ALE of Si based on SF6 Physisorption

Jack Nos
Gaelle Antoun
  • Fonction : Auteur
  • PersonId : 1089289
Thomas Tillocher
Philippe Lefaucheux

Résumé

Cryogenic Atomic Layer Etching (Cryo-ALE) has been presented in the previous J2C editions as a different approach to achieve ALE of SiO2. In this process, C4F8 was first used as a precursor chemical in the modification" step in order to physisorb on a cooled SiO2 surface between -120C and -90C. The etching" step is then achieved by using an Ar plasma with a low energy ion bombardment. Although satisfying results were obtained with C4F8, the process does not allow high etching selectivity of SiO2 over Si and Si3N4 as the deposited CFx passivation layer is not thick enough to effciently passivate Si and Si3N4 surfaces. Therefore, cryo-ALE based on SF6 physisorption was studied to extend the use of this new type of process to other materials and to characterize its etching properties. The Cryogenic Atomic Layer Etching process concept will first be introduced in this poster. The presentation will then focus on the experimentation methods and objectives of this study.
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Dates et versions

hal-04138885 , version 1 (23-06-2023)

Identifiants

  • HAL Id : hal-04138885 , version 1

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Jack Nos, Gaelle Antoun, Thomas Tillocher, Philippe Lefaucheux, Rémi Dussart. Cryo-ALE of Si based on SF6 Physisorption. Journées Jeunes Chercheurs, Mar 2021, Orleans, France, France. ⟨hal-04138885⟩
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