Communication Dans Un Congrès Année : 2009

MEMs based reconfigurable Dual Behaviour Resonator using BCB technology in W-frequency Range

Résumé

This paper presents a novel tuneable resonator topology from W-frequency band to V-frequency band. The resonator is developed on TFMS structure using RF-MEMs implemented in Si-BCB technology. Specific synthesis are developed and validated through electromagnetic simulations.

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Dates et versions

hal-04134159 , version 1 (20-06-2023)

Identifiants

  • HAL Id : hal-04134159 , version 1

Citer

Thanh Mai Vu, Gaëtan Prigent, Robert Plana. MEMs based reconfigurable Dual Behaviour Resonator using BCB technology in W-frequency Range. IEEE Newcas-Taisa, Toulouse, France, Jun 2009, Toulouse, France. 4p. ⟨hal-04134159⟩
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