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Article Dans Une Revue Journal of Applied Physics Année : 2016

Dynamical heat transport amplification in a far-field thermal transistor of VO 2 excited with a laser of modulated intensity

Jose Ordonez-Miranda
  • Fonction : Auteur
Jérémie Drevillon

Résumé

Far-field radiative heat transport in a thermal transistor made up of a vanadium dioxide base excited with a laser of modulated intensity is analytically studied and optimized. This is done by solving the equation of energy conservation for the steady-state and modulated components of the temperature and heat fluxes that the base exchanges with the collector and emitter. The thermal bistability of VO2 is used to find an explicit condition on the laser intensity required to maximize these heat fluxes to values higher than the incident flux. For a 1 μm-thick base heated with a modulation frequency of 0.5 Hz, it is shown that both the DC and AC components of the heat fluxes are about 4 times the laser intensity, while the AC temperature remains an order of magnitude smaller than the DC one at around 343 K. Higher AC heat fluxes are obtained for thinner bases and/or lower frequencies. Furthermore, we find that out of the bistability temperatures associated with the dielectric-to-metal and metal-to-dielectric transitions of VO2, the amplification of the collector-to-base and base-to-emitter heat fluxes is still possible, but at modulation frequencies lower than 0.1 Hz.
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Dates et versions

hal-04134045 , version 1 (20-06-2023)

Identifiants

Citer

Jose Ordonez-Miranda, Younès Ezzahri, Jérémie Drevillon, Karl Joulain. Dynamical heat transport amplification in a far-field thermal transistor of VO 2 excited with a laser of modulated intensity. Journal of Applied Physics, 2016, 119 (20), pp.203105. ⟨10.1063/1.4952604⟩. ⟨hal-04134045⟩
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