Field-free spin–orbit torque driven switching of perpendicular magnetic tunnel junction through bending current - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Nano Letters Année : 2023

Field-free spin–orbit torque driven switching of perpendicular magnetic tunnel junction through bending current

Résumé

Current-induced spin–orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making them attractive for memory, in-memory computing, and logic applications. However, the requirement of the external magnetic field to achieve deterministic switching in perpendicularly magnetized SOT-MTJs limits its implementation for practical applications. Here, we introduce a field-free switching (FFS) solution for the SOT-MTJ device by shaping the SOT channel to create a “bend” in the SOT current. The resulting bend in the charge current creates a spatially nonuniform spin current, which translates into inhomogeneous SOT on an adjacent magnetic free layer enabling deterministic switching. We demonstrate FFS experimentally on scaled SOT-MTJs at nanosecond time scales. This proposed scheme is scalable, material-agnostic, and readily compatible with wafer-scale manufacturing, thus creating a pathway for developing purely current-driven SOT systems.
Fichier principal
Vignette du fichier
2305.03961.pdf (1.44 Mo) Télécharger le fichier
2305.03961 (1).pdf (1.44 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-04131206 , version 1 (16-06-2023)

Identifiants

Citer

Vaishnavi Kateel, Viola Krizakova, Siddharth Rao, Kaiming Cai, Mohit Gupta, et al.. Field-free spin–orbit torque driven switching of perpendicular magnetic tunnel junction through bending current. Nano Letters, 2023, 2023, pp.3c00639. ⟨10.1021/acs.nanolett.3c00639⟩. ⟨hal-04131206⟩
21 Consultations
36 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More