Modification of free-volume defects in the GaS2-Ga2S3-CsCl glasses - Archive ouverte HAL
Article Dans Une Revue Journal of Materials Science: Materials in Electronics Année : 2023

Modification of free-volume defects in the GaS2-Ga2S3-CsCl glasses

H. Klym
  • Fonction : Auteur correspondant
L. Calvez
A.I. Popov
  • Fonction : Auteur

Résumé

Modification of free-volume positron trapping defects in the GaS2-Ga2S3-CsCl chalcogenide glasses was studied using positron annihilation lifetime spectroscopy and Doppler broadening of annihilation radiation methods. It is shown that the addition of CsCl to the main glass matrix leads to agglomeration of internal free-volume defects, which are di- or tri-atomic vacancies. However, an excessive amount of CsCl component causes a decrease in the size and content of these defects in the internal structure of the glass against the background of water adsorption in nanovoids with a radius of 0.3 nm. The obtained results are confirmed by normal and abnormal trends in the correlation of the S parameter, which characterizes the annihilation of positrons with low-momentum valence electrons and the W parameter, which corresponds to the annihilation of positrons with high-momentum core electrons.

Domaines

Matériaux
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Dates et versions

hal-04115730 , version 1 (29-08-2024)

Identifiants

Citer

H. Klym, L. Calvez, A.I. Popov. Modification of free-volume defects in the GaS2-Ga2S3-CsCl glasses. Journal of Materials Science: Materials in Electronics, 2023, 34 (13), pp.1104. ⟨10.1007/s10854-023-10431-9⟩. ⟨hal-04115730⟩
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