Intersubband Optical Properties of Strained InAsSb/AlGaAs Quantum Well Structure
Résumé
AbstractIn this paper, the intersubband optical properties of strained InAsSb/AlGaAs single quantum well structure have been investigated in a detailed way as depending on the structure parameters. For this aim, first, we have computed the energy eigenvalues and their corresponding wave functions of this structure by means of the solution of the Schrodinger equation in envelope function effective mass approximation. Second, we have calculated some important parameters as strain, band gap energy, effective mass and the conduction band (CB) offset ratio. Finally, the intersubband absorption coefficient properties have been determined as a function of the composition, well thickness and the emission wavelength.