Experimental validation of the ‘FLoating Islands’ concept: 95 V breakdown voltage vertical FLIDiode - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEE Proceedings Circuits Devices and Systems Année : 2005

Experimental validation of the ‘FLoating Islands’ concept: 95 V breakdown voltage vertical FLIDiode

Résumé

In this paper, the “FLoating Island” concept has been implemented on silicon: a FLIDiode has been built for the first time. Experimental results confirm the predictive 2D simulations: this new diode exhibits an important breakdown voltage (about 95 Volts) with a N- epitaxial layer doping concentration (1.1 x 1016 cm-3) usually dedicated to 50 Volts devices. These measurements validate the “FLoating Island” concept and the efficiency of the original edge cell that will be used in the FLIMOS technology: it can be expected that the specific on- resistance of the FLIMOSFET will be drastically reduced compared to the conventional VDMOSFET
Fichier non déposé

Dates et versions

hal-04106729 , version 1 (25-05-2023)

Identifiants

Citer

S. Alves, Frédéric Morancho, J.-M. Reynes, J. Margheritta, I. Deram, et al.. Experimental validation of the ‘FLoating Islands’ concept: 95 V breakdown voltage vertical FLIDiode. IEE Proceedings Circuits Devices and Systems, 2005, 153 (1), pp.53-60. ⟨10.1049/ip-cds:20050048⟩. ⟨hal-04106729⟩
13 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More