Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates - Archive ouverte HAL
Article Dans Une Revue Microelectronic Engineering Année : 2023

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hal-04092737 , version 1 (09-05-2023)

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Giuseppe Greco, Patrick Fiorenza, Emanuela Schilirò, Corrado Bongiorno, Salvatore Di Franco, et al.. Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates. Microelectronic Engineering, 2023, 276, pp.112009. ⟨10.1016/j.mee.2023.112009⟩. ⟨hal-04092737⟩

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