Analysis of the reset transition in bipolar HfO2-based ReRAM to improve modeling accuracy - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2022

Analysis of the reset transition in bipolar HfO2-based ReRAM to improve modeling accuracy

Fichier non déposé

Dates et versions

hal-04092434 , version 1 (09-05-2023)

Identifiants

Citer

Silvana Guitarra, Lionel Trojman, Laurent Raymond, Martin Gavilanez. Analysis of the reset transition in bipolar HfO2-based ReRAM to improve modeling accuracy. Latin American Electron Devices Conference (LAEDC), Jul 2022, Cancun, Mexico. ⟨10.1109/LAEDC54796.2022.9908218⟩. ⟨hal-04092434⟩
9 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More