Micro-structuration of rare earth doped materials by lift-off processing of pulsed laser deposited layers are promising in integrated optics since they do not require complex processing. However, they are so far limited to Y2O3 host and have never been reported for infrared emission, which have many applications in telecommunication, sensing and so on. In this work, we have studied micro-devices made by pulsed laser deposition combined to lift-off processing on Si, with Er doped materials that have infrared emission at 1.54µm wavelength, corresponding to the 4 I1 3/2 → 4 I1 5/2 Er 3+ transition. Two host materials have been compared: Al2O3 commonly used in integrated optics and Y2O3, which is a well-known crystalline host for rare earth doping. For both materials, micro-photoluminescence measurements combined with X-ray diffraction showed efficient incorporation of Er 3+ ions into the host matrix, associated with strong emission when the matrix is amorphous for Al2O3 or crystalline for Y2O3. Thus, this work extends the pulsed laser deposition lift-off processing to other materials and wavelength range, which opens the way of easy realization of infrared micro-emitter for photonics applications.