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Article Dans Une Revue Nano Letters Année : 2023

Background-Free Near-Infrared Biphoton Emission from Single GaAs Nanowires

Résumé

The generation of photon pairs from nanoscale structures with high rates is still a challenge for the integration of quantum devices, as it suffers from parasitic signals from the substrate. In this work, we report type-0 spontaneous parametric down-conversion at 1550 nm from individual bottom-up grown zinc-blende GaAs nanowires with lengths of up to 5 μm and diameters of up to 450 nm. The nanowires were deposited on a transparent ITO substrate, and we measured a background-free coincidence rate of 0.05 Hz in a Hanbury–Brown–Twiss setup. Taking into account transmission losses, the pump fluence, and the nanowire volume, we achieved a biphoton generation of 60 GHz/Wm, which is at least 3 times higher than that of previously reported single nonlinear micro- and nanostructures. We also studied the correlations between the second-harmonic generation and the spontaneous parametric down-conversion intensities with respect to the pump polarization and in different individual nanowires.
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Dates et versions

hal-04071266 , version 1 (13-10-2023)

Identifiants

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Grégoire Saerens, Thomas Dursap, Ian Hesner, N. M. H. Duong, A. S. Solntsev, et al.. Background-Free Near-Infrared Biphoton Emission from Single GaAs Nanowires. Nano Letters, 2023, 23 (8), pp.3245-3250. ⟨10.1021/acs.nanolett.3c00026⟩. ⟨hal-04071266⟩
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