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Article Dans Une Revue Nanotechnology Année : 2023

Ultrathin GaN quantum wells in AlN nanowires for UV-C emission

Résumé

Abstract Molecular beam epitaxy growth and optical properties of GaN quantum disks in AlN nanowires were investigated, with the purpose of controlling the emission wavelength of AlN nanowire-based light emitting diodes. Besides GaN quantum disks with a thickness ranging from 1 to 4 monolayers, a special attention was paid to incomplete GaN disks exhibiting lateral confinement. Their emission consists of sharp lines which extend down to 215 nm, in the vicinity of AlN band edge. The room temperature cathodoluminescence intensity of an ensemble of GaN quantum disks embedded in AlN nanowires is about 20 % of the low temperature value, emphasizing the potential of ultrathin/incomplete GaN quantum disks for deep UV emission.
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Dates et versions

hal-04064951 , version 1 (10-10-2023)

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Rémy Vermeersch, Gwénolé Jacopin, Florian Castioni, Jean-Luc Rouvière, Alberto Garcia-Cristobal, et al.. Ultrathin GaN quantum wells in AlN nanowires for UV-C emission. Nanotechnology, 2023, 34, pp.275603. ⟨10.1088/1361-6528/accaeb⟩. ⟨hal-04064951⟩
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