Flexible Microcrystalline Silicon Source-Gated Transistors with Negliglible DC Performace Degradation at 2.5 mm Bending Radius - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2022

Flexible Microcrystalline Silicon Source-Gated Transistors with Negliglible DC Performace Degradation at 2.5 mm Bending Radius

Résumé

The first flexible source-gated transistors (SGTs) in microcrystalline silicon have been fabricated and characterized under bending stress. As SGTs are contact controlled devices, the channel does not modulate drain current, however its geometry has implications for operation. We show how reduced channel length in SGTs helps promote negligible threshold voltage shifts when strain is introduced with a radius of r = 2.5 mm.
Fichier non déposé

Dates et versions

hal-04056480 , version 1 (03-04-2023)

Identifiants

Citer

Eva Bestelink, Jean-Charles Fustec, Olivier De Sagazan, Hao-Jing Teng, Radu A. Sporea. Flexible Microcrystalline Silicon Source-Gated Transistors with Negliglible DC Performace Degradation at 2.5 mm Bending Radius. 2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS), Jul 2022, Vienna, Austria. ⟨10.1109/FLEPS53764.2022.9781587⟩. ⟨hal-04056480⟩
18 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More