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Communication Dans Un Congrès Année : 2021

Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations

Résumé

Schottky barrier diodes (SBDs) with realistic geometries have been studied by means of a 2-D ensemble Monte Carlo simulator. The non-linearity of the Capacitance-Voltage (C-V) characteristic is the most important parameter for optimizing SBDs as frequency multipliers. In this paper, by changing the values of several technological parameters, we analyze their influence on the edge fringing capacitance in a GaN SBD. We have found that the parameters related with the dielectric used for the passivation and the lateral extension of the epilayer significantly affect the fringing capacitance, thus increasing the value of the total capacitance above the ideal one.

Dates et versions

hal-04054156 , version 1 (31-03-2023)

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Citer

B. Orfao, B.G. Vasallo, D. Moro-Melgar, Mohammed Zaknoune, Giuseppe Di Gioia, et al.. Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations. 2021 13th Spanish Conference on Electron Devices (CDE), Jun 2021, Sevilla, Spain. pp.94-97, ⟨10.1109/CDE52135.2021.9455727⟩. ⟨hal-04054156⟩
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