GaN/Si vs GaAs LNA Linear and Nonlinear Characterizations, New FOMs, in Millimeter Wave T/R Chip Context - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2022

GaN/Si vs GaAs LNA Linear and Nonlinear Characterizations, New FOMs, in Millimeter Wave T/R Chip Context

Résumé

This paper presents a comparative performance analysis of two LNAs realized in GaAs and GaN technologies for millimeter wave T/R chip (transceiver/receiver) applications. Circuits are fabricated using two different technologies and characterized on board. Measurements are performed in 24–32 GHz frequency band. A first comparison based on classic measurements is done by introducing a linear factor of merit. Non-linear characterizations complete this set of measurements to quantify the power handling of the two LNAs in order to determine the linear and non-linear operating areas and the handling of the spurious signals. We introduce a new large signal figure of merit (FOMLS) to quantify these performances. These two FOMs are applied to a state of the art to analyse performances according to system requirements.
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hal-04051855 , version 1 (30-03-2023)

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Lucas Letailleur, Ahmad Al Hajjar, Martine Villegas, Charle Edoua K, Majid El Kamouchi, et al.. GaN/Si vs GaAs LNA Linear and Nonlinear Characterizations, New FOMs, in Millimeter Wave T/R Chip Context. 2022 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC), Apr 2022, Cardiff, United Kingdom. pp.1-3, ⟨10.1109/INMMiC54248.2022.9762168⟩. ⟨hal-04051855⟩
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