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Article Dans Une Revue New Journal of Physics Année : 2023

Gate reflectometry in dense quantum dot arrays

Résumé

Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We perform gate-voltage pulsing and gate-based reflectometry measurements on a dense 2 × 2 array of silicon QDs fabricated in a 300 mm-wafer foundry. Utilizing the strong capacitive couplings within the array, it is sufficient to monitor only one gate electrode via high-frequency reflectometry to establish single-electron occupation in each of the four dots and to detect single-electron movements with high bandwidth. A global top-gate electrode adjusts the overall tunneling times, while linear combinations of side-gate voltages yield detailed charge stability diagrams. To test for spin physics and Pauli spin blockade at finite magnetic fields, we implement symmetric gate-voltage pulses that directly reveal bidirectional interdot charge relaxation as a function of the detuning between two dots. Charge sensing within the array can be established without the involvement of adjacent electron reservoirs, important for scaling such split-gate devices towards longer 2 × N arrays. Our techniques may find use in the scaling of few-dot spin-qubit devices to large-scale quantum processors.

Dates et versions

hal-04051795 , version 1 (30-03-2023)

Identifiants

Citer

Fabio Ansaloni, Heorhii Bohuslavskyi, Federico Fedele, Torbjørn Rasmussen, Bertram Brovang, et al.. Gate reflectometry in dense quantum dot arrays. New Journal of Physics, 2023, 25 (3), pp.033023. ⟨10.1088/1367-2630/acc126⟩. ⟨hal-04051795⟩
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