Design of an Integrated Power Module for Silicon Carbide MOSFET with Self-Compensation of the Magnetic Field - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Materials Science Forum Année : 2022

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hal-04051106 , version 1 (29-03-2023)

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Fatme Abed Ali, Yvan Avenas, Pierre Lefranc, Pierre Olivier Jeannin, Hadi Alawieh, et al.. Design of an Integrated Power Module for Silicon Carbide MOSFET with Self-Compensation of the Magnetic Field. Materials Science Forum, 2022, 1062, pp.637-641. ⟨10.4028/p-gvcp58⟩. ⟨hal-04051106⟩
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