Comprehensive Analysis of RF Hot-Carrier Reliability Sensitivity and Design Explorations for 28GHz Power Amplifier Applications
Résumé
Design of reliable and high-performance radiofrequency (RF) power amplifiers (PA) in CMOS technologies is becoming more challenging due to the increasing reliability issues as we approach the scaling limit. To provide insight on hot-carrier injection (HCI) degradation at RF frequencies, this paper presents a comprehensive analysis to study HCI degradation at 28GHz with different PA architectures based on their mission profile via quasi-static approximations. Sensitivity analysis on power amplifier RF performance is also discussed to offer a better understanding on the importance of accurate device and aging behavior modeling.