Comprehensive Analysis of RF Hot-Carrier Reliability Sensitivity and Design Explorations for 28GHz Power Amplifier Applications - Archive ouverte HAL
Communication Dans Un Congrès Année : 2022

Comprehensive Analysis of RF Hot-Carrier Reliability Sensitivity and Design Explorations for 28GHz Power Amplifier Applications

Résumé

Design of reliable and high-performance radiofrequency (RF) power amplifiers (PA) in CMOS technologies is becoming more challenging due to the increasing reliability issues as we approach the scaling limit. To provide insight on hot-carrier injection (HCI) degradation at RF frequencies, this paper presents a comprehensive analysis to study HCI degradation at 28GHz with different PA architectures based on their mission profile via quasi-static approximations. Sensitivity analysis on power amplifier RF performance is also discussed to offer a better understanding on the importance of accurate device and aging behavior modeling.
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Dates et versions

hal-04050556 , version 1 (29-03-2023)

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J. Hai, F. Cacho, A. Divay, Estelle Lauga-Larroze, Jean-Daniel Arnould, et al.. Comprehensive Analysis of RF Hot-Carrier Reliability Sensitivity and Design Explorations for 28GHz Power Amplifier Applications. IEEE International Reliability Physics Symposium (IRPS 2022), IEEE, Mar 2022, Dallas, United States. pp.4B.2-1-4B.2-6, ⟨10.1109/IRPS48227.2022.9764535⟩. ⟨hal-04050556⟩
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