Publisher's Note: “Low residual doping level in homoepitaxially grown ZnO layers” [Appl. Phys. Lett. 92, 141101 (2008)] - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2008

Publisher's Note: “Low residual doping level in homoepitaxially grown ZnO layers” [Appl. Phys. Lett. 92, 141101 (2008)]

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hal-04037787 , version 1 (20-03-2023)

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I. Robin, A. Ribeaud, S. Brochen, G. Feuillet, P. Ferret, et al.. Publisher's Note: “Low residual doping level in homoepitaxially grown ZnO layers” [Appl. Phys. Lett. 92, 141101 (2008)]. Applied Physics Letters, 2008, 92 (20), pp.209904. ⟨10.1063/1.2932096⟩. ⟨hal-04037787⟩
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