Theoretical study of the impact of alloy disorder on carrier transport and recombination processes in deep UV (Al,Ga)N light emitters - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2023

Theoretical study of the impact of alloy disorder on carrier transport and recombination processes in deep UV (Al,Ga)N light emitters

Résumé

Aluminium gallium nitride ((Al,Ga)N) has gained significant attention in recent years due to its potential for highly efficient light emitters operating in the deep ultra-violet (UV) range (< 280 nm). However, given that current devices exhibit extremely low efficiencies, understanding the fundamental properties of (Al,Ga)N-based systems is of key importance. Here, using a multi-scale simulation framework, we study the impact of alloy disorder on carrier transport, radiative and non-radiative recombination processes in a c-plane Al 0.7 Ga 0.3 N/Al 0.8 Ga 0.2 N quantum well embedded in a p-i-n junction. Our calculations reveal that alloy fluctuations can open "percolative" pathways that promote transport for the electrons and holes into the quantum well region. Such an effect is neglected in conventional, and widely used transport simulations. Moreover, we find also that the resulting increased carrier density and alloy induced carrier localization effects significantly increase non-radiative Auger-Meitner recombination in comparison to the radiative process. Thus, to avoid such non-radiative process and potentially related material degradation, a careful design (wider well, multi quantum wells) of the active region is required to improve the efficiency of deep UV light emitters.
Fichier principal
Vignette du fichier
QW_UV_APL.pdf (906.55 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-04037215 , version 1 (20-03-2023)
hal-04037215 , version 2 (20-07-2023)

Identifiants

Citer

Robert Finn, Michael O'Donovan, Patricio Farrell, Julien Moatti, Timo Streckenbach, et al.. Theoretical study of the impact of alloy disorder on carrier transport and recombination processes in deep UV (Al,Ga)N light emitters. Applied Physics Letters, 2023, 122 (24), ⟨10.1063/5.0148168⟩. ⟨hal-04037215v2⟩
51 Consultations
50 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More