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Article Dans Une Revue Physical Review B Année : 2001

Electrical properties of highly disordered bismuth-based composites

Résumé

A pronounced classical size effect in the transport properties was observed in bulk bismuth-silica nanocom- posites as a result of the limitation of the carrier mean free path by the grain size. From field- and temperature- dependent magnetotransport measurements, carrier mobility and density were explored in these highly disordered systems. The results clearly show modifications in the band parameters from those of bulk single- crystalline Bi.
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hal-03996402 , version 1 (19-02-2023)

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F. Brochin, Bertrand Lenoir, C. Bellouard, H. Scherrer, I. Vurgaftman, et al.. Electrical properties of highly disordered bismuth-based composites. Physical Review B, 2001, 63 (7), pp.073106. ⟨10.1103/PhysRevB.63.073106⟩. ⟨hal-03996402⟩
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