Composition, structural and electrical properties of silicon nitride oxide very thin films (<10 nm) with embedded Si-Nanocrystals for non-volatile memory applications - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2010
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hal-03988071 , version 1 (14-02-2023)

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Simon Perret-Tran-Van, C. Bonafos, Bernard Despax, Kremena Makasheva, P.E. Coulon. Composition, structural and electrical properties of silicon nitride oxide very thin films (<10 nm) with embedded Si-Nanocrystals for non-volatile memory applications. 2010 MRS Spring Meeting, San Francisco, CA, USA., 2010, San Francisco, United States. ⟨hal-03988071⟩
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