Advanced concept for fabrication of Si-nanocrystal memory devices through PPECVD followed by thermal oxidation - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2011
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hal-03987862 , version 1 (14-02-2023)

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Kremena Makasheva, Bernard Despax, Simon Perret-Tran-Van, C. Bonafos. Advanced concept for fabrication of Si-nanocrystal memory devices through PPECVD followed by thermal oxidation. Leading Edge Embedded NVM Workshop, Gardanne, France., 2011, Gardanne, France. ⟨hal-03987862⟩
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