Development of a 0D model to investigate the plasma chemistry in a Townsend discharge in the mixture N2/O2 : role of the associative ionization mechanisms in the memory effect - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2018

Development of a 0D model to investigate the plasma chemistry in a Townsend discharge in the mixture N2/O2 : role of the associative ionization mechanisms in the memory effect

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Plasmas
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hal-03987802 , version 1 (14-02-2023)

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  • HAL Id : hal-03987802 , version 1

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Simon Dap, Xi Lin, Clémence Tyl, Nicolas Naudé, Nicolas Gherardi. Development of a 0D model to investigate the plasma chemistry in a Townsend discharge in the mixture N2/O2 : role of the associative ionization mechanisms in the memory effect. 16th International Symposium on High Pressure Low Temperature Plasma Chemistry (HaKone XVI), Sept. 2-7, 2018, Beijing (CHINA), 2018, Beijing, China. ⟨hal-03987802⟩
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