Stable Organic Radical for Enhancing Metal-Monolayer-Semiconductor Junction Performance - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue ACS Applied Materials & Interfaces Année : 2023

Stable Organic Radical for Enhancing Metal-Monolayer-Semiconductor Junction Performance

Résumé

The preparation of monolayers based on an organic radical and its diamagnetic counterpart has been pursued on hydrogen-terminated silicon surfaces. The functional monolayers have been investigated as solid-state metal/monolayer/semiconductor (MmS) junctions showing a characteristic diode behavior which is tuned by the electronic characteristics of the organic molecule. The eutectic gallium-indium liquid metal is used as a top electrode to perform the transport measurements and the results clearly indicate that the SOMO-SUMO molecular orbitals impact the device performance. The junction incorporating the radical shows an almost two orders of magnitude higher rectification ratio (R(|J(1V)/J(-1V)|) = 10(4.04)) in comparison with the nonradical one (R(|J(1V)/J(-1V)|) = 10(2.30)). The high stability of the fabricated MmS allows the system to be interrogated under irradiation, evidencing that at the wavelength where the photon energy is close to the band gap of the radical there is a clear enhancement of the photoresponse. This is translated into an increase of the photosensitivity (S(ph)) value from 68.7 to 269.0 mA/W for the nonradical and radical based systems, respectively.
Fichier principal
Vignette du fichier
De Sousa et ak 2023-Stable Organic Radical for Enhancing.pdf (995.81 Ko) Télécharger le fichier
Supporting Information.pdf (2.67 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Licence : CC BY NC - Paternité - Pas d'utilisation commerciale
Licence : CC BY NC - Paternité - Pas d'utilisation commerciale

Dates et versions

hal-03971857 , version 1 (31-03-2023)

Identifiants

Citer

J. Alejandro de Sousa, Raphael Pfattner, Diego Gutiérrez, Kilian Jutglar, Stefan T. Bromley, et al.. Stable Organic Radical for Enhancing Metal-Monolayer-Semiconductor Junction Performance. ACS Applied Materials & Interfaces, 2023, 15 (3), pp.4635-4642. ⟨10.1021/acsami.2c15690⟩. ⟨hal-03971857⟩
13 Consultations
11 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More