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Article Dans Une Revue Materials Année : 2023

Polarization Doping in a GaN-InN System—Ab Initio Simulation

Résumé

Polarization doping in a GaN-InN system with a graded composition layer was studied using ab initio simulations. The electric charge volume density in the graded concentration part was determined by spatial potential dependence. The emerging graded polarization charge was determined to show that it could be obtained from a polarization difference and the concentration slope. It was shown that the GaN-InN polarization difference is changed by piezoelectric effects. The polarization difference is in agreement with the earlier obtained data despite the relatively narrow bandgap for the simulated system. The hole generation may be applied in the design of blue and green laser and light-emitting diodes.

Dates et versions

hal-03968721 , version 1 (01-02-2023)

Identifiants

Citer

Ashfaq Ahmad, Pawel Strak, Pawel Kempisty, Konrad Sakowski, Jacek Piechota, et al.. Polarization Doping in a GaN-InN System—Ab Initio Simulation. Materials, 2023, 16 (3), pp.1227. ⟨10.3390/ma16031227⟩. ⟨hal-03968721⟩
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