Improved Power Factor in Self-Substituted Fe 2 VAl Thermoelectric Thin Films Prepared by Co-sputtering
Résumé
We present a strong improvement of the electronic transport properties in the Fe 2 VAl Heusler alloy obtained in thin film form by a co-sputtering process. The power factor is improved when deposition occurs at temperatures close to 873 K and when composition is tuned using a co-sputtering process. High values up to 5.6 mW/K 2 m are obtained for n-type films deposited at 873 K which is up to now a record for self-substituted Fe 2 VAl thermoelectric thin films. Influence of the co-sputtering conditions on atomic composition as well as substrate effect on electronic transport properties are also presented.
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