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Communication Dans Un Congrès Année : 2017

Gate leakage-current analysis and modelling of planar and trench power SiC Mosfet devices in extreme short-circuit operation

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hal-03937650 , version 1 (13-01-2023)

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  • HAL Id : hal-03937650 , version 1

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François Boige, Frédéric Richardeau. Gate leakage-current analysis and modelling of planar and trench power SiC Mosfet devices in extreme short-circuit operation. 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), Sept. 25-28, 2017, Bordeaux (FRANCE), 2017, Bordeaux, France. ⟨hal-03937650⟩
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