Evidence of strain induced structural change in hetero-epitaxial NdNiO 3 thin films with metal-insulator transition
Résumé
Neodymium nickelate thin films have been prepared on NdGaO3 substrates by RF magnetron sputtering and post-annealing treatment under oxygen pressure. Transport properties are found to depend strongly on film thickness. Thick films show transport properties close to bulk ceramics, while very thin films exhibit a large transition from metal to insulator which occurs over a wide temperature range with high resistivity. Structure and surface morphology of the films have been investigated by Transmission Electron Microscopy (TEM) and Atomic Force Microscopy (AFM). Thin films (≈17 nm) grow heteroepitaxially, while thicker films (≈73 nm) show a granular structure. The thinnest sample suggests a symmetry change induced by the epitaxial strain of the substrate. This paper discusses the relationship between microstructure and transport properties. PACS. 73.50.-h Electronic transport phenomena in thin films-71.30.+h Metal-insulator transitions and other electronic transitions-73.61.-r Electrical properties of specific thin films