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Communication Dans Un Congrès Année : 2022

Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses

Résumé

The development of gallium nitride (GaN) components is one of the most noticeable advances in power electronics and for high-frequency applications. Nevertheless, GaN components are not yet totally reliable, mainly because of the trapping phenomenon which affects the static characteristics of GaN components, including the on-state resistance. Dynamic resistance degradation studies have been carried out, for quasi-static and hard switching (Double Source Test: DST) stresses. The results show the influence of the reverse stress voltage and hard switching on the characteristics of the AlGaN/GaN Schottky diodes.
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Dates et versions

hal-03887865 , version 1 (02-01-2023)

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Maroun Alam, Hervé Morel, Luong Viêt Phung, Dominique Planson, A. Yvon. Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses. 2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.195-198, ⟨10.1109/CAS56377.2022.9934143⟩. ⟨hal-03887865⟩
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