Format du dépôt |
Fichier |
Type de dépôt |
Communication dans un congrès |
Titre |
en
Raman Thermometry Characterization of GeSbTe based Phase Change Materials
|
Résumé |
en
Ge-rich GeSbTe N-doped alloys present a solution for the reliability and thermal stability requirements of Phase Change Memories for embedded non-volatile memory automotive applications. The thermal performance of these memories is defined by the optimization of crystallization temperature, kinetics and thermal properties of materials and interfaces. In this work, we study the structural evolution and crystallization temperature of Ge-rich GeSbTe N-doped alloy from amorphous phase to complete crystallization by Raman spectroscopy. We highlight the beginning of crystallization process by Ge crystallization, followed by crystallization of both GeTe and SbTe related structures. Further, the sensitivity of the vibrational modes present in this ternary chalcogenide alloy to temperature and power is examined to identify potential thermometers. Finally, we present the working principle of Raman thermometry to extract the thermal conductivity aided by finite-element calculations and report the thermal conductivity of Ge-rich GeSbTe N-doped alloy.
|
Auteur(s)
|
Akash Patil
1, 2
, Yannick Le Friec
3
, Jury Sandrini
3
, Roberto Simola
3
, Philippe Boivin
4
, Emmanuel Dubois
2, 1
, Jean-François Robillard
1, 2
1
MICROELEC SI - IEMN -
Microélectronique Silicium - IEMN
( 1067492 )
- Groupe Microélectronique Silicium - IEMN UMR8520 - (Silicon Microelectronics group)
- France
-
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 ( 1066983 )
;
-
Centrale Lille ( 120930 )
;
-
Université de Lille ( 374570 )
;
-
Centre National de la Recherche Scientifique UMR8520 ( 441569 )
;
-
Université Polytechnique Hauts-de-France ( 1001263 )
;
-
JUNIA ( 1059196 )
;
-
Université catholique de Lille ( 300877 )
2
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
( 1066983 )
- [Univ. Lille, CNRS, Centrale Lille Institut, Junia, Univ. Polytechnique Hauts-de-France] ––
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D’ASCQ CEDEX
- France
-
Centrale Lille ( 120930 )
;
-
Université de Lille ( 374570 )
;
-
Centre National de la Recherche Scientifique UMR8520 ( 441569 )
;
-
Université Polytechnique Hauts-de-France ( 1001263 )
;
-
JUNIA ( 1059196 )
;
-
Université catholique de Lille ( 300877 )
3
ST-CROLLES -
STMicroelectronics [Crolles]
( 23639 )
- 850 rue Jean Monnet BP 16 38926 Crolles
- France
4
ST-ROUSSET -
STMicroelectronics [Rousset]
( 19590 )
- ZI de Peynier Rousset, avenue Celestin Coq - 13790 Rousset
- France
|
Titre du congrès |
28th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC 2022)
|
Langue du document |
Anglais
|
Vulgarisation |
Non
|
Comité de lecture |
Oui
|
Invité |
Non
|
Audience |
Internationale
|
Date début congrès |
2022-09-28
|
Ville |
Dublin
|
Pays |
Irlande
|
Source |
2022 28th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)
|
Actes |
Oui
|
Page/Identifiant |
1-5
|
Date fin congrès |
2022-09-30
|
Éditeur commercial |
|
Collaboration/Projet |
-
Laboratoire commun STMicroelectronics-IEMN T4
|
Financement |
-
This project has received funding from the ECSEL Joint Undertaking (JU) under grant agreement No 101007321. The JU receives support from the European Union’s Horizon 2020 research and innovation programme and France, Belgium, Czech Republic, Germany, Italy, Sweden, Switzerland,
Turkey.
|
Domaine(s) |
-
Physique [physics]
-
Sciences de l'ingénieur [physics]
|
Référence interne |
|
Mots-clés |
en
Phase change memories, Ge-rich GST N-doped, Raman thermometry, structure, thermal conductivity
|
DOI |
10.1109/THERMINIC57263.2022.9950662 |