Near-infrared emission in Er- and Pr-doped YSZ crystalline superlattices
Résumé
Broadband on-chip light amplifier is one of the key building blocks for the development of integrated circuits for datacom and telecom applications. In this context, the article reports on the near-IR emission properties of rare-earth doped crystalline thin layers of Y2O3-ZrO2 (YSZ): Erdoped YSZ, Pr-doped YSZ and a superlattice of Er-and Pr-doped YSZ. Absorption studies proved differences in wavelengths in superlattice sample with Pr 3+ and Er 3+ in comparison with Er-doped YSZ and Pr-doped YSZ monolayers. Power efficiency was determined for all samples, revealing larger emission and higher optical efficiency for Er 3+ ions at 1530 nm (C-band) than Pr 3+ emission at 1350 nm (O-band) in the superlattice sample. Simultaneous emission from Er 3+ and Pr 3+ ions was observed by exciting the Er-and Pr-doped YSZ superlattice in a range from 980 to 1000 nm wavelengths. Besides, energy transfer from Pr 3+ to Er 3+ was demonstrated in the superlattice sample containing Pr 3+ and Er 3+ ions.
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