CVD-growth of high-quality graphene over Ge(100) by annihilation of thermal pits. - Archive ouverte HAL
Communication Dans Un Congrès Année : 2022

CVD-growth of high-quality graphene over Ge(100) by annihilation of thermal pits.

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hal-03868580 , version 1 (23-11-2022)

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  • HAL Id : hal-03868580 , version 1

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Thierno Mamoudou Diallo, M.R. Aziziyan, Roxana Arvinte, R. Arès, Simon Fafard, et al.. CVD-growth of high-quality graphene over Ge(100) by annihilation of thermal pits.. Advanced Epitaxy for Freestanding Membranes and 2D Materials (AEFM), Jun 2022, Cambridge, United States. ⟨hal-03868580⟩
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