SiC structural characterization by non destructive near-field microscopy techniques
Résumé
SiC sputtered and e-beam evaporated layers have been deposited on 4H-SiC substrates. Recrystallization has been tried by high temperature annealing with two plateaus at 1400°C and 1700°C. The crystallinity was systematically investigated by non destructive near-field microscopy techniques, particularly adapted to the thin thickness of our layers. Good recrystallization is confirmed only on the e-beam evaporated layers and after the higher annealing plateau by preserving 4H substrate polytype.
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