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Communication Dans Un Congrès Année : 2022

SiC structural characterization by non destructive near-field microscopy techniques

Résumé

SiC sputtered and e-beam evaporated layers have been deposited on 4H-SiC substrates. Recrystallization has been tried by high temperature annealing with two plateaus at 1400°C and 1700°C. The crystallinity was systematically investigated by non destructive near-field microscopy techniques, particularly adapted to the thin thickness of our layers. Good recrystallization is confirmed only on the e-beam evaporated layers and after the higher annealing plateau by preserving 4H substrate polytype.

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Dates et versions

hal-03856554 , version 1 (16-11-2022)

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Kuan-Ting Wu, Enora Vuillermet, Elise Usureau, Youssef El-Helou, Michel Kazan, et al.. SiC structural characterization by non destructive near-field microscopy techniques. 2022 International Semiconductor Conference (CAS), Oct 2022, Poiana Brasov, Romania. pp.73-76, ⟨10.1109/CAS56377.2022.9934358⟩. ⟨hal-03856554⟩
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