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Communication Dans Un Congrès Année : 2022

Development of low-damage plasma process using remote plasma source for the gate opening step in the AlGaN/GaN MOS HEMT integration

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hal-03831336 , version 1 (26-10-2022)

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  • HAL Id : hal-03831336 , version 1

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Oleh Fesiienko, Camille Petit-Etienne, Maxime Darnon, Ali Soltani, Hassan Maher, et al.. Development of low-damage plasma process using remote plasma source for the gate opening step in the AlGaN/GaN MOS HEMT integration. Plasma Etch and Strip in Microtechnologies, Sep 2022, Leuven, Belgium. ⟨hal-03831336⟩
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