Design and Optimization of New Enhanced VerticalGaN Nanowire Transistor Using Sentaurus TCAD for Power Applications - Archive ouverte HAL
Communication Dans Un Congrès Année : 2022

Design and Optimization of New Enhanced VerticalGaN Nanowire Transistor Using Sentaurus TCAD for Power Applications

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hal-03829527 , version 1 (25-10-2022)

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  • HAL Id : hal-03829527 , version 1

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M. Benjelloun, N. Al Taradeh, C. Rodriguez, N. Gogneau, A. Soltani, et al.. Design and Optimization of New Enhanced VerticalGaN Nanowire Transistor Using Sentaurus TCAD for Power Applications. Compound Semiconductor Week 2022, Jun 2022, Ann Arbor, United States. ⟨hal-03829527⟩
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