Surface and Buffer Trap Signatures in Fe-doped AlGaN/GaN HEMT Identified by LF S-parameter TCAD Simulations - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2022

Surface and Buffer Trap Signatures in Fe-doped AlGaN/GaN HEMT Identified by LF S-parameter TCAD Simulations

P. Vigneshwara Raja
Mohamed Bouslama
Raphaël Sommet

Résumé

In this paper, the trap signatures located at the GaN cap/SiN interface and in the GaN buffer are clearly identified in the Fe-doped AlGaN/GaN HEMT device by means of low frequency (LF) S-parameter characteristics. For that, LF Sparameter TCAD Sentaurus physics-based 2D simulations are performed for different temperatures ranging from 25°C to 75°C. In fact, the imaginary part of Y22 allows to extract the buffer trap parameters, while the imaginary part of Y21 provides a quantitative information of the traps located at both surface and buffer regions. An excellent agreement between measurement and simulation of Y21 parameter is obtained in this work. An activation energy of Ea= 0.45 eV and a cross section around σn=3×10-16 cm 2 are identified for buffer traps. The computed parameters for the surface traps are ED = ~0.3 eV and σD = ~5×10-18 cm 2 .

Domaines

Electronique
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Dates et versions

hal-03812830 , version 1 (13-10-2022)

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  • HAL Id : hal-03812830 , version 1

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Jean-Christophe Nallatamby, Jose Anserson Silva dos Santos, P. Vigneshwara Raja, Mohamed Bouslama, Raphaël Sommet. Surface and Buffer Trap Signatures in Fe-doped AlGaN/GaN HEMT Identified by LF S-parameter TCAD Simulations. 17th European Microwave Integrated Circuits Conference (EuMiC), Sep 2022, Milan, Italy. ⟨hal-03812830⟩
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